外部尺寸:2.5× 2.0 mm(SG-9101CG)、3.2× 2.5 mm(SG-9101CE)、
5.0× 3.2 mm(SG-9101CB)、7.0× 5.0 mm(SG-9101CA)
扩频晶体振荡器(可编程),输出频率:0.67 MHz to 170 MHz (1 × 10-6 Step)
电压:1.62V to 3.63V,输出:CMOS,功能:Output enable (OE) or Standby (/ST)
向下或中央扩展调制,可配置扩频设置:3种调制模式(Hershey-kiss、正弦波、三角形),4种调制频率,6种扩展比例
利用PLL技术,写入频点参数,快速交货,可用晶振编程工具“SG-Writer II”写入频点
SG-9101CE (0.67-170MHZ):EPSON(爱普生)可编程展频晶振,工作温度105°C
SG-9101CE常用频点列表如下:
规格型号 | 产品编码 | MOQ (PCS) |
SG-9101CE MP Blank | X1G005321000200 | 2000 |
SG-9101CE 27.000000MHz C05PGAAA | X1G005321001100 | 2000 |
SG-9101CE 12.000000MHz C02PHAAA | X1G005321001200 | 2000 |
SG-9101CE 40.000000MHz C05PGAAA | X1G005321001300 | 2000 |
SG-9101CE 37.125000MHz C05PGAAA | X1G005321003300 | 2000 |
SG-9101CE 24.000000MHz C05PGAAA | X1G005321003400 | 2000 |
SG-9101CE 37.125000MHz C10PGAAA | X1G005321003500 | 2000 |
SG-9101CE 100.000000MHz C02PGACA | X1G005321004500 | 2000 |
SG-9101CE 49.152000MHz C05PHAAA | X1G005321004700 | 2000 |
爱普生(EPSON)可编程扩频晶振:SG-9101CG、SG-9101CE、SG-9101CB、SG-9101CA
可编程扩频晶振: SG-9101CG、SG-9101CE、SG-9101CB、SG-9101CA,CMOS输出,供电电压是1.62V ~ 3.63V,工作温度可以达到-40℃至+105℃,符合工业级温度要求。
l 外部尺寸:2.5× 2.0 mm(SG-9101CG)、
3.2× 2.5 mm(SG-9101CE)、
5.0× 3.2 mm(SG-9101CB)、
7.0× 5.0 mm(SG-9101CA)
l 扩频晶体振荡器(可编程)
l 输出频率:0.67 MHz to 170 MHz (1 × 10-6 Step)
l 电压:1.62V to 3.63V
l 功能:Output enable (OE) or Standby (/ST)
l 输出:CMOS
l 向下或中央扩展调制
l 可配置扩频设置
3种调制模式(Hershey-kiss、正弦波、三角形),4种调制频率,6种扩展比例
l 利用PLL技术,写入频点参数,快速交货
l 可用晶振编程工具“SG-Writer II”进行频点写入操作
l 物联网
l 医疗、工业自动化等
爱普生的SG-9101CG、SG-9101CE、SG-9101CB、SG-9101CA系列是具有CMOS输出的扩频可编程晶体振荡器系列。虽然该系列与早期的Epson产品一样,提供了相同的频率和其他参数的易编程性,但它们的工作温度范围也更广,最高极限为105°C。除了2.5×2.0 mm的封装可以使电子制造商节省板空间外,振荡器还可以提供以下流行的封装尺寸:3.2×2.5 mm、5.0×3.2 mm和7.0×5.0 mm。用户可以将产品编程为所需的输出频率以及所需的扩频设置,配备Epson SG-Writer II(单独出售)。这也将大大有助于提高性能、降低功率需求、加快开发周期和小批量生产。
规格 (特征)
项目 | 符号 | 规格说明 | 条件 | ||||||||||||
电源电压 | VCC | 1.80 V Typ. | 2.50 V Typ. | 3.30 V Typ. | |||||||||||
1.62 to 1.98V | 1.98 to 2.20V | 2.20 to 2.80V | 2.70 to 3.63 V | ||||||||||||
输出频率范围 | f0 | 0.67 MHz to 170 MHz | |||||||||||||
储存温度 | T_stg | -40℃ to +125°C | Storage as single product | ||||||||||||
工作温度 | T_use | G: -40℃ to +85°C | |||||||||||||
频率稳定度 *1 | f_tol | ±50 x 10-6 | Average frequency of 1s gate time | ||||||||||||
功耗 | ICC | 3.4mA Max. | 3.5mA Max. | 3.6mA Max. | 3.7mA Max. | T_use= +105°C | No load | ||||||||
2.9mA Typ. | 3.0mA Typ. | 3.2mA Typ. | T_use= +25°C | ||||||||||||
5.7mA Max. | 6.0mA Max. | 6.9mA Max. | 8.3mA Max. | T_use= +105°C | No load | ||||||||||
4.9mA Typ. | 5.9mA Typ. | 7.0mA Typ. | T_use= +25°C | ||||||||||||
输出禁用电流 | I_dis | 3.4mA Max. | 3.4mA Max. | 3.5mA Max. | 3.7mA Max. | OE=GND , f0 = 170 MHz | |||||||||
待机电流 | I_std | 0.9μA Max. | 1.0μA Max. | 1.5μA Max. | 2.5μA Max. | T_use= +105°C | ST = GND | ||||||||
0.3μA Typ. | 0.4μA Typ. | 0.5μA Typ. | 1.1μA Typ. | T_use= +25°C | |||||||||||
占空比 | SYM | 45% to 55% | 50% VCC Level | ||||||||||||
输出电压 | VOH | 90% VCC Min. | [mA] | ||||||||||||
tr / tf | Vcc | A | B | C | D | ||||||||||
Default | IOH | -2.5 | -3.5 | -4.0 | -5.0 | ||||||||||
IOL | 2.5 | 3.5 | 4.0 | 5.0 | |||||||||||
Default | IOH | -1.5 | -2.0 | -2.5 | -3.0 | ||||||||||
VOL | 10% VCC Max. | IOL | 1.5 | 2.0 | 2.5 | 3.0 | |||||||||
Slow | IOH | -1.0 | -1.5 | -2.0 | -2.5 | ||||||||||
IOL | 1.0 | 1.5 | 2.0 | 2.5 | |||||||||||
A: 1.62 to 1.98 V , B: 1.98 to 2.20 V | |||||||||||||||
输出负载条件 | L_CMOS | 15pF Max. | |||||||||||||
输入电压 | VIH | 70% VCC Min. | OE or ST | ||||||||||||
VIL | 30% VCC Max. | ||||||||||||||
上升/下降时间 | 默认 | tr / tf | 3.0 ns Max. | f0 > 40MHz | 20% VCC to 80% VCC | ||||||||||
6.0 ns Max. | f0 ≦ 40MHz | ||||||||||||||
快速 | 3.0 ns Max. | f0=0.67to170MHz | |||||||||||||
缓慢 | 10.0 ns Max. | f0=0.67to20MHz | |||||||||||||
禁用时间 | t_stp | 1 μs Max. | Measured from the time OE or ST pin crosses 30 % Vcc | ||||||||||||
启用时间 | t_sta | 1 μs Max. | Measured from the time OE pin crosses 70 % Vcc | ||||||||||||
恢复时间 | t_res | 3 ms Max. | Measured from the time ST pin crosses 70 % Vcc | ||||||||||||
振荡器启动时间 | t_str | 3 ms Max. | Measured from the time Vcc reaches its rated minimum value, 1.62 V | ||||||||||||
*1频率容差包括初始频率容差、温度变化、电源电压变化、回流漂移、负载漂移和老化(+25°C,10年)。
Pin | Name | I/O type | Function | |
1 | OE | Input | Output enable | 高:OUT引脚的指定频率输出 低:输出引脚低(弱下拉),只有输出驱动器被禁用。 |
ST | Input | Standby | 高:OUT引脚的指定频率输出 低:输出引脚低(弱下拉) 设备进入待机模式。电源电流降低至the least值I_std。 | |
2 | GND | Power | Ground | |
3 | OUT | Output | Clock output | |
4 | VCC | Power | Power supply |
*2请不要在打开状态下使用OE/S̅T̅终端。
(1) 产品型号 SG-9101CE 170.000000MHZ C 20 PH A A A
(标准形式) ① ② ③ ④ ⑤⑥⑦⑧⑨⑩
① Model ② Size ③ Frequency ④ Spread type ⑤ Spread width ⑥ Function
⑦ Operating temperature ⑧ Modulation frequency ⑨ Spread profile ⑩ Rise time / Fall time
② Size | |
CG | 2.5 mm × 2.0 mm |
CE | 3.2 mm × 2.5 mm |
CB | 5.0 mm × 3.2 mm |
CA | 7.0 mm × 5.0 mm |
④ Spread type | |
C | Center spread |
D | Down spread |
⑤ Spread width | ||
Center spread | Down spread | |
02 | ±0.25 % | - |
05 | ±0.5 % | -0.5 % |
07 | ±0.75 % | - |
10 | ±1.0 % | -1.0 % |
15 | ±1.5 % | -1.5 % |
20 | ±2.0 % | -2.0 % |
30 | - | -3.0 % |
40 | - | -4.0 % |
⑥ Function | |
P | Output enable (#1pin = OE) |
S | Standby (#1pin = S̅T̅) |
⑦ Operating temperature | |
G | -40 °C to +85 °C |
H | -40 °C to +105 °C |
⑧ Modulation frequency | |
A | 25.4 kHz (default) |
B | 12.7 kHz |
C | 8.5 kHz |
D | 6.3 kHz |
⑨ Spread profile | |
A | Hershey-kiss (default) |
B | Sine-wave |
C | Triangle |
⑩ Rise time / Fall time | |
A | Default |
B | Fast |
C | Slow |
(2) 产品料号 (Blank section is decided by each detail specifications.)
SG-9101CG X1G005291xxxx00
SG-9101CA X1G005301xxxx00
SG-9101CB X1G005311xxxx00
SG-9101CE X1G005321xxxx00
① ② ③ ④⑤
① Crystal devices ② Model ③ Pb free code(1:EU RoHS / 2: Pb free)
④ Detail specifications ⑤ Packing(00:Recommended packing 3K pcs/Reel)
(3) 空白片型号和料号:
SG-9101CG MP Blank X1G005291000200
SG-9101CA MP Blank X1G005301000200
SG-9101CB MP Blank X1G005311000200
SG-9101CE MP Blank X1G005321000200
① ② ③ ④ ⑤
① Crystal devices ② Model ③ Pb free code(1:EU RoHS / 2: Pb free)
④ Detail specifications
⑤ Packing(00:Recommended packing CG:3K pcs/Reel, CE:2K pcs/Reel,CB \ CA:1K pcs/Reel)
为了保持稳定运行,在尽可能靠近晶体产品电源端子的位置(VCC-GND之间)提供0.1µF旁路电容器。