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TG5032SGN:爱普生(EPSON) 温补晶振、TCXO / VC-TCXO、超高稳定性10pins端子型

  • 频率范围:10MHz to 40MHz;输出波形:Clipped sine wave

  • 电源电压:3.3 V Typ.;频率/温度特性:±0.1×10-6 Max.(-40°C to +85°C)

  • 频率老化:±3.0×10-6  Max. / 20 years

  • 外部尺寸:5.0×3.2×1.45 mm(10 pins)

  • 功能:超高稳定性,宽温度范围

  • 应用领域:小基站,Stratum3,SyncE,IEEE1588



规格参数

TG5032SGN:爱普生(EPSON) 温补晶振、TCXO / VC-TCXO、超高稳定性10pins端子型

 

TG5032SGN常用频率列表如下:

规格型号

产品编码

MOQ (PCS)

TG5032SGN  10.000000MHz CAGHDA

X1G005241xxxx00

1000

TG5032SGN  10.000000MHz CAGHNA

X1G005241xxxx00

1000

TG5032SGN  10.000000MHz CAGHGA

X1G005241xxxx00

1000

TG5032SGN  12.800000MHz CAGHDA

X1G005241xxxx00

1000

TG5032SGN  20.000000MHz CAGHDA

X1G005241xxxx00

1000

TG5032SGN  24.576000MHz CAGHDA

X1G005241xxxx00

1000

TG5032SGN  25.000000MHz CAGHDA

X1G005241000300

1000

TG5032SGN  25.000000MHz CMGHNA

X1G005241xxxx00

1000

TG5032SGN  25.000000MHz CAGHNA

X1G005241xxxx00

1000

TG5032SGN  25.000000MHz CAGNDA

X1G005241xxxx00

1000

TG5032SGN  25.600000MHz CAGHDA

X1G005241xxxx00

1000

TG5032SGN  26.000000MHz CAGHDA

X1G005241xxxx00

1000

TG5032SGN  30.720000MHz CAGHDA

X1G005241xxxx00

1000

TG5032SGN   30.720000MHz CAGHNA

X1G005241xxxx00

1000

TG5032SGN   30.720000MHz CAGHKB

X1G005241xxxx00

1000

TG5032SGN  38.400000MHz CAGHDA

X1G005241xxxx00

1000

TG5032SGN  38.800000MHz CAGHDA

X1G005241xxxx00

1000

TG5032SGN  40.000000MHz CAGHDA

X1G005241000400

1000

TG5032SGN 40.000000MHz CAGHJA

X1G005241xxxx00

1000

TG5032SGN 19.200000MHz FHGHDA

X1G005241001000

1000

TG5032SGN 19.200000MHz CAGHDA

X1G005241000200

1000

TG5032SGN 19.200000MHz FAGHDA

X1G005241001200

1000

 

特征

 

EPSON 温补晶振TCXO: TG5032SGN

 

• 频率范围:10MHz to 40MHz

• 输出波形:Clipped sine wave

• 电源电压:3.3 V Typ.

• 频率/温度特性:±0.1×10-6 Max.(-40°C to +85°C)

• 频率老化:±3.0×10-6  Max. / 20 years

• 外部尺寸:5.0×3.2×1.45 mm(10 pins)

• 应用领域:

小基站,Stratum3,SyncE,IEEE1588

•功能:

超高稳定性,宽温度范围

 

推荐应用领域

 

     小基站(Small Cells)

     Stratum3

     毫微微蜂窝基站 (Femtocell)

     网络系统 (Network system etc.)

 

概述

 

TG5032SGN是Clipped sine wave输出的超高稳定性温度补偿晶体振荡器,并使用晶体单元的基本振荡产生削波正弦波输出。这实现了频率为10至40MHz的低相位噪声,并且适用于包括小单元的参考时钟。这使产品符合各种标准,包括GR-1244-CORE Stratum3、G.8262.1、G.8273.2(A级、B级)。

 

规格 (特征)

 

项目

符号

TG5032SGN   (Clipped sine wave)

条件 / 备注

VC-TCXO

TCXO

输出频率范围

f0

10 MHz to   40 MHz


10, 12.8,   19.2, 20, 24.576, 25, 25.6, 26,
  30.72, 38.4, 38.88, 40 MHz

Standard frequency

电源电压

VCC

C: 3.3 V ±   5 % ( Standard )
  (Supply voltage range :2.375 V to 3.63 V)


储存温度

T_stg

-40°C to   +90°C

Storage as single product

工作温度

T_use

G : -40°C   to +85°C


a)   频率稳定度

f_tol

± 1.0 × 10-6Max.

After reflow, +25 °C

b)   频率/温度特性

fo-TC

A: ±0.1 ×   10-6 Max. / G : -40°C to +85°C
  H: ±0.25 × 10-6 Max. / G : -40°C to +85°C
  B: ±0.28 × 10-6 Max. / G : -40°C to +85°C

Reference to (fmax + fmin) / 2

c)   频率/负载系数

fo-Load

± 0.1 × 10-6 Max.

Load ± 10 %

d)   频率/电压系数

fo-VCC

± 0.1 × 10-6 Max.

VCC ± 5 %

e)   频率老化

f_age

± 0.5 × 10-6 Max.

+25°C , First year

± 3.0 × 10-6 Max.

+25°C , 20 years

滞留稳定性

(恒温)

-

± 0.01 ×   10-6 Max. (+25°C, 24 hours)

After 10 days of continuous operation.

± 0.04 ×   10-6 Max. (+25°C, 24 hours)

After 48 hours of continuous operation.

漂移产生
  ( MTIE, TDEV )

-

-

Compliant   with
  GR-1244CORE , ITU-T G.8262

自由运行精度

-

± 4.6 × 10-6 Max.

This includes Item a), b), c), d) and e)

功耗

ICC

5.0 mA   Max.

10 MHz ≦ f≦   26 MHz

输入阻抗

Rin

100 kΩ   Min.

-

VC- GND (DC)

频率控制范围

f_cont

± 5 × 10-6 to   ± 10 ×10-6

-

J,D : VC= 1.5 V ± 1.0 V
   at VCC = 3.3V
  K,E : VC= 1.65 V ± 1.0 V
   at VCC = 3.3V

频率变化极性

-

Positive   polarity

-


占空比

SYM

-


输出电压

VOH

-


VOL

-


输出电压

VPP

0.8 V Min.

Peak to Peak

上升/下降时间

tr/tf

8.0 ns   Max.

10 % VCC to 90 % VCC level
  Load : 15 pF

启动时间

t_str

5.0 ms   Max. (Non-Filter: Standard)
  2.0 sec. Max. (Filter: Option)

T = 0 at 90 % VCC

输出负载条件

Load

10 kΩ/ 10   pF


输入电压

VIH

70 % VCC Min.

OE terminal
  (Enable voltage)

VIL

30 % VCC Max.

OE terminal
  (Disable voltage)

 

产品命名规则

 

TG5032SGN温补晶振产品名称参数:

(1)  产品名称 (标准形式)

TG5032CGN  30.720000MHz   C  A  G H D A

TG5032SGN  30.720000MHz   C  A  G H D A

  ①     ②            ③              ④ ⑤  ⑥⑦⑧⑨

①  Model    ②  Output ((C: CMOS, S: Clipped sine wave)  ③  Frequency

④  Supply voltage (C: 3.3V Typ.)

⑤  Frequency / temperature characteristics (A: ±0.1× 10-6 Max., H: ±0.25× 10-6 Max., B: ±0.28× 10-6 Max.,)

⑥  Operating temperature (G: -40 °C to +85 °C)  ⑦  OE function (H: Active High)

⑧ VC function(Refer to symbol table, A: VC =any)

⑨ Internal identification code ("A" is default)

 

⑧ VC function   [Vc] (symbol table)

Voltage   [V]

Non

1.5

1.65

Any

Non Filter

N

D

E

A

Filter ON

G

J

K

F

 

 

(2)  产品型号/ 产品编码  (Blank section is decided by each detail specifications.)

TG5032CGN       X1G005231xxxx00

TG5032SGN       X1G005241xxxx00

         ① ②  ③ ④  ⑤

① Crystal devices  ② Model  ③ Pb free code(1:EU RoHS / 2: Pb free)

④ Detail specifications  ⑤ Packing(Recommended packing  00:1K pcs/Reel)

 

Frequency

Part   number

[MHz]

TG5032CGN   (Size: 5.0 x 3.2)

TG5032SGN   (Size: 5.0 x 3.2)

VCC   = 3.3 V

VCC   = 3.3 V

Suffix:   CAGHDA

Suffix:   SAGHDA

10

X1G005231xxxx00

X1G005241xxxx00

12.8

X1G005231xxxx00

X1G005241xxxx00

19.2

X1G005231xxxx00

X1G005241xxxx00

20

X1G005231xxxx00

X1G005241xxxx00

24.576

X1G005231xxxx00

X1G005241xxxx00

25

X1G005231xxxx00

X1G005241xxxx00

25.6

X1G005231xxxx00

X1G005241xxxx00

30.72

X1G005231xxxx00

X1G005241xxxx00

38.4

X1G005231xxxx00

X1G005241xxxx00

38.88

X1G005231xxxx00

X1G005241xxxx00

40

X1G005231xxxx00

X1G005241xxxx00

 

 

External dimensions                                                                                                                                                         (Unit: mm)

 

TG5032SGN External dimensions1.png

 

Footprint (Recommended)                                                                                                                                            (Unit: mm)

 

TG5032SGN footprint1.png

为保持稳定运行,在尽可能靠近晶体产品电源端子的位置(VCC-GND之间)提供0.1μF旁路电容。